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讨论新闻主题﹕Toshiba Launches 1200V Silicon Carbide MOSFET That Contributes to High-efficiency Power Supply

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Toshiba Electronic Devices & Storage Corporation has launched “TW070J120B,” a 1200V silicon carbide (SiC) MOSFET for industrial applications that include large capacity power supply. Shipments start today. The power MOSFET using the SiC, a new material, achieves high voltage resistance, high-speed switching, and low On-resistance compared to conventional silicon (Si) MOSFET, IGBT products. Therefore, it will contribute to lower power consumption and system downsizing. Fabricated with Toshiba’s second-generation chip design, which improves the reliability of SiC MOSFET, the new device realizes low input capacitance, a low gate-input charge, and low drain-to-source On-resistance. Compared with “GT40QR21,” Toshiba’s 1200V silicon insulated gate bipolar transistor (IGBT), it cuts turn-off switching loss by about 80% and switching time (fall time) by about 70%, while delivering low On-voltage characteristics with a drain current of 20A or less

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